advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -60v simple drive requirement r ds(on) 170m fast switching characteristic i d -3a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice rohs-compliant product 201024071-1/4 AP9578GM rating -60 25 -3 parameter drain-source voltage gate-source voltage continuous drain current 3 , v gs @ 10v continuous drain current 3 , v gs @ 10v -2.3 pulsed drain current 1 -20 2.5 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.02 storage temperature range thermal data parameter total power dissipation advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-3a - - 170 m , source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-2a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-3a, v gs =0 v , - 41 - ns q rr reverse recovery charge di/dt=100a/s - 95 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 125 2/4 AP9578GM
AP9578GM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 5 10 15 20 024681012 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -7.0v -5.0v -4.5v v g = -3.0 v t a =25 o c 0 5 10 15 20 024681012 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -7.0v -5.0v -4.5v v g = -3.0 v t a = 150 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-3a v g =-10v 140 155 170 185 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-2a t a =25 0 1 2 3 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 AP9578GM t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 4 8 12 16 20 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = - 3 a v ds = - 48 v 10 100 1000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.1 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) 1ms 10ms 100ms 1s dc t a =25 o c single pulse
package outline : so-8 millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e1 3.80 3.90 4.00 e 5.80 6.15 6.50 l 0.38 0.71 1.27 0 4.00 8.00 e 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ advanced power electronics corp. c detail a a1 a 9578 g m ywwsss package code part numbe r detail a l date code (ywwsss) y last digit of the year ww week sss sequence e b 1 34 5 6 7 8 2 d e1 e meet rohs requirement
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